280 31DF4 uni t s ymbol characteristic features ! ! lo w forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability me c hanical data c ! c a se: molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 1.2 grams (approx.) ! mounting position: any ! marking: type number maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. see figure 5. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. 1 of 2 31DF4 ? 31df6 pf ns v p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rm s reverse voltage v r(rm s) a v erage rectified output current (note 1) @t a = 55 c i o 3.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 45 a forward v o ltage @i f = 3 . 0a v fm peak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 5.0 100 a revers e rec overy time (note 2) t rr t y pical junction capacitance (note 3) c j operat i ng temperature range t j -65 to +150 c storage temperature range t stg -65 t o +150 c 1.70 35 80 z ibo seno electronic engineering co., ltd. www.senocn.com 31DF4 ? 31df6 a superf ast glass passvited rectifier 3.0 g l ass passivated die construction ! le ad free: for rohs / lead free version 31df6 v v 420 400 600 do-201 a d di m min max a 25. 4 ? b 8. 50 9.50 c 1.20 1.30 d 5. 0 5.60 a ll d imensions in mm do-201 a d di m min max a 24. 5 ? b 7. 20 9.50 c 1.10 1.30 d 5. 00 5.60 a ll d imensions in mm a l l d a t a s h e e t
0.01 0.1 1.0 10 100 0.6 1.0 1.4 1.8 t = 25 c j pulse width = 300 s 2% duty cycle m v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f i , inst antaneous forward current (a) f 10 100 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 peak forward surge current 8.3ms single half sine-wave 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 10 100 1000 1 10 100 c , cap acitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r 0 1 2 3 4 02 5 5 0 75 100 125 150 175 i , a verage fwd rectified current (a) (av) t , ambient temperature ( c) fig. 1 forward current derating curve a single phase half wave resistive or inductive load 2 of 2 31DF4 ? 31df6 z ibo seno electronic engineering co., ltd. www.senocn.com 31DF4 ? 31df6 a l l d a t a s h e e t
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